SW068R08ET - N-channel MOSFET

Samwin

General Description

Gate 2.

Drain 3.

Key Features

TO-220 TO-263.
High ruggedness.
Low RDS(ON) (Typ 7.1mΩ)@VGS=10V.
Low Gate Charge (Typ 59nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW068R08ET n-channel mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW068R08ET
Manufacturer	Samwin
File Size	853.69 KB
Description	N-channel MOSFET
Datasheet	SW068R08ET Datasheet

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Full PDF Text Transcription (Reference)

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SW068R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263  High ruggedness  Low RDS(ON) (Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ 59nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Synchronous Rectification, Li Battery Protect Board, Inverter 1 23 1 23 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 80V ID : 120A RDS(ON) : 7.