Datasheet Details
| Part number | SW4N60K |
|---|---|
| Manufacturer | SEMIPOWER |
| File Size | 958.39 KB |
| Description | N-Channel MOSFET |
| Download | SW4N60K Download (PDF) |
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| Part number | SW4N60K |
|---|---|
| Manufacturer | SEMIPOWER |
| File Size | 958.39 KB |
| Description | N-Channel MOSFET |
| Download | SW4N60K Download (PDF) |
|
|
|
3 This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes Item Sales Type 1 SW F 4N60K 2 SW I 4N60K 3 SW D 4N60K Absolute maximum ratings Marking SW4N60K SW4N60K SW4N60K Package TO-220F TO-251 TO-252 Packaging TUBE TUBE REEL Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V) (note 1) (note 2) (note 1) Value TO-220F TO-251 TO-252 600 4* 2.5* 12 ±30 50 5 30 Unit V A A A V mJ mJ V/ns dv/dt PD TSTG, TJ TL Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SW4N60 | N-Channel MOSFET | Samwin |
|
SW4N60A | N-Channel MOSFET | Samwin |
|
SW4N60V | N-Channel MOSFET | Samwin |
| Part Number | Description |
|---|---|
| SW4N60B | N-channel I-PAK/D-PAK/TO-220F MOSFET |
| SW4N60D | MOSFET |