SW4N60K Key Features
- High ruggedness
- Low RDS(ON) (Typ 1Ω)@VGS=10V
- Low Gate Charge (Typ 13nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Adapter,LED, Charger
- Part: SW4N60K
- Manufacturer: SEMIPOWER
- Size: 958.39 KB
Other SW4N60K Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Samwin |
SW4N60 | N-Channel MOSFET |
|
Samwin |
SW4N60A | N-Channel MOSFET |
|
Samwin |
SW4N60V | N-Channel MOSFET |
SW4N60K Description
3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 20 23.5 106.4 101.4 0.19 0.85 0.81 -55 ~ + 150 300 V/ns W W/oC oC oC.