Datasheet4U Logo Datasheet4U.com

BLV2N60 - N-channel Enhancement Mode Power MOSFET

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply.

📥 Download Datasheet

Datasheet Details

Part number BLV2N60
Manufacturer SHANGHAI BELLING
File Size 456.36 KB
Description N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLV2N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLV2N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 4.4Ω 2A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply.
Published: |