BLV108 datasheet by SHANGHAI BELLING.
| Part number | BLV108 |
|---|---|
| Datasheet | BLV108_SHANGHAIBELLING.pdf |
| File Size | 116.13 KB |
| Manufacturer | SHANGHAI BELLING |
| Description | Vertical N-channel MOSFET |
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.. BLV108 N 沟纵向 MOSFET 描述: 描述: N 沟增强型 VDMOS，高速开关，无二次击穿 产品应用： 电话机电路 继电器电路 驱动电路等 工作条件 符号 VDSS VGSS ID PD Tj, TSDG (T=25℃ (T=25℃) 参数 极限值 200 + 20 300 1 -55 to +150 单位 V V mA W o 漏源电压 栅源电压 漏电流 Power Dissipation for Dual Operation 结温度和存储温度 C 热特性 Rth j-a 电学特性.
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