BLV2N60 Overview
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. , Junction to Ambient Max.
BLV2N60 datasheet by SHANGHAI BELLING.
| Part number | BLV2N60 |
|---|---|
| Datasheet | BLV2N60_SHANGHAIBELLING.pdf |
| File Size | 456.36 KB |
| Manufacturer | SHANGHAI BELLING |
| Description | N-channel Enhancement Mode Power MOSFET |
|
|
|
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. , Junction to Ambient Max.
View all SHANGHAI BELLING datasheets
| Part Number | Description |
|---|---|
| BLV108 | Vertical N-channel MOSFET |
| BLV4N60 | N-channel Enhancement Mode Power MOSFET |
| BLV7002 | N-channel Enhancement Mode Vetical D-MOS Transistor |
| BLVP304 | P-channel vertical MOSFET |