100N10F7 Description
This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. S(1, 2, 3) 12 34 Top View AM15540v2 Order code STL100N10F7 Table.
100N10F7 Key Features
- Ultra low on-resistance
- 100% avalanche tested