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100N3LLH6 - N-channel Power MOSFET

General Description

bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET exhibits the lowest RDS(on) in all t(spackages.

PowerFLAT™ ( 5x6 ) Figure 1.

lete ProducTable 1.

Key Features

  • STL100N3LLH6 N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on) ).
  • High avalanche ruggedness t(s.
  • Low gate drive power losses uc.
  • Very low switching gate charge rod.

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Features STL100N3LLH6 N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) )■ High avalanche ruggedness t(s■ Low gate drive power losses uc■ Very low switching gate charge rodApplication P■ Switching applications oleteDescription bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET exhibits the lowest RDS(on) in all t(spackages. PowerFLAT™ ( 5x6 ) Figure 1. Internal schematic diagram lete ProducTable 1.