100N3LLH6 Datasheet | STMicroelectronics

Features STL100N3LLH6 N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) )- High avalanche ruggedness t(s- Low gate drive power losses uc- Very low switching gate charge rodApplication P- Switching applications oleteDescription bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET exhibits the lowest RDS(on) in all t(spackages. PowerFLAT™ ( 5x6 ) Figure 1....