Description
bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET exhibits the lowest RDS(on) in all t(spackages.
Features
- STL100N3LLH6
N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VI DeepGATE™ Power MOSFET
Preliminary data
Type STL100N3LLH6
VDSS 30 V
RDS(on) max
0.0035 Ω
ID 25 A (1)
1. The value is rated according Rthj-pcb.
- RDS(on).
- Qg industry benchmark.
- Extremely low on-resistance RDS(on)
).
- High avalanche ruggedness t(s.
- Low gate drive power losses uc.
- Very low switching gate charge rod.
100N3LLH6 Datasheet
