100N8F6 Datasheet | STMicroelectronics

STP100N8F6 N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6 Power MOSFET in a TO-220 package - production data Figure 1: Internal schematic diagram Features Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February...