Description
S(1, 2, 3)
12 34 Top View
NG4D5678S123
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.Product status link STL100N8F7
Product summary
Order code
STL100N8F7
Marking
100N8F7
Package
PowerFLAT 5x6
Packing
Tape and reel
DS10666 - Rev 4 - November 2019 For further information contact your local
Features
- PowerFLAT 5x6
Order code
V DS
RDS(on) max
STL100N8F7
80 V
6.1 mΩ.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness
ID 100 A
PTOT 120 W
D(5, 6, 7, 8)
8 76 5.
100N8F7 Datasheet
