100N8F7 Description
S(1, 2, 3) 12 34 Top View NG4D5678S123 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 1 Electrical ratings Table 1. This value is rated according to Rthj-c.
100N8F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness