100N3LLH6 Description
The value is rated according Rthj-pcb RDS(on) Qg industry benchmark Extremely low on-resistance RDS(on) ) High avalanche ruggedness t(s Low gate drive power losses uc Very low switching gate charge rodApplication P Switching applications oleteDescription bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET...
100N3LLH6 Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)