100N8F7 Datasheet - STMicroelectronics

N-channel Power MOSFET

100N8F7 Features

* PowerFLAT 5x6 Order code V DS RDS(on) max STL100N8F7 80 V 6.1 mΩ

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 100 A PTOT 120 W D(5, 6, 7, 8) 8 76 5 Applica

100N8F7 General Description

S(1, 2, 3) 12 34 Top View NG4D5678S123 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status.

100N8F7 Datasheet (857.77 KB)