23N80K5 Datasheet | STMicroelectronics

Features Order code RDS(on) max. STB23N80K5 800 V 0.28 Ω 16 A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected PTOT 190 W Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB23N80K5 Product summary Order code STB23N80K5 Marking Package D²PAK Packing Tape and reel DS11240 - Rev 2 - May 2021 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C...