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24N60M2 - N-Channel MOSFET

General Description

AM15572v1_no_tab technology.

Key Features

  • Order code VDS @TJmax RDS(on) max. ID STF24N60M2 650 V 190 mΩ 18 A 23 1 TO-220FP.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected D(2) G(1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF24N60M2 Datasheet N-channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP package Features Order code VDS @TJmax RDS(on) max. ID STF24N60M2 650 V 190 mΩ 18 A 23 1 TO-220FP • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected D(2) G(1) Applications • Switching applications • LCC converters • Resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1_no_tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.