2N7000 datasheet, mosfet equivalent, ST Microelectronics

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Features and benefits

Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s
* Low Qg uc
* Low threshold drive rodApplication te P
* Swit.

Application

oleDescription bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip.

Description

bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless.

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