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2N7000 - N-Channel MOSFET

General Description

bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process.

Key Features

  • Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s.
  • Low Qg uc.
  • Low threshold drive rod.

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Other Datasheets by STMicroelectronics

Part Number Description
2N7002 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s■ Low Qg uc■ Low threshold drive rodApplication te P■ Switching applications oleDescription bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless critical alignment steps therefore a uremarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1.