2STA1695 transistor equivalent, high power pnp epitaxial planar bipolar transistor.
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Preliminary data
High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applicatio.
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Audio power amplifier TO-3P
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar tr.
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier outpu.
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