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2STA1695 Datasheet High power PNP epitaxial planar bipolar transistor

Manufacturer: STMicroelectronics

General Description

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Overview

www.DataSheet4U.com 2STA1695 High power PNP epitaxial planar bipolar transistor.

Key Features

  • Preliminary data High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC 3 2 1.