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2STA2121 Datasheet High power PNP epitaxial planar bipolar transistor

Manufacturer: STMicroelectronics

General Description

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Overview

www.DataSheet4U.com 2STA2121 High power PNP epitaxial planar bipolar transistor Preliminary.

Key Features

  • High breakdown voltage VCEO = 250 V Complementary to 2STC5949 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC.