Datasheet Summary
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High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
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- High breakdown voltage VCEO = 250 V plementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
3 2 1
Applications
- Audio power amplifier
TO-3P
Description
Figure 1. The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram
Table 1.
Device summary
Marking 2STA2120 Package TO-3P Packaging Tube
Order code 2STA2120
May 2008
Rev 2
1/8
.st. 8
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