Datasheet Summary
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High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
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- High breakdown voltage VCEO = 250 V plementary to 2STC5949 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
- Audio power amplifier
TO-264
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STA2121 Package TO-264 Packaging Tube
Order code 2STA2121
November 2007
Rev 1
1/7
.st. 7
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