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2STA1943 - High power PNP epitaxial planar bipolar transistor

General Description

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz 3.

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www.DataSheet4U.com 2STA1943 High power PNP epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STA1943 Marking 2STA1943 Package TO-264 Packaging Tube December 2007 Rev 2 1/9 www.st.com 9 Electrical ratings www.DataSheet4U.com 2STA1943 1 Electrical ratings Table 2.