Datasheet Summary
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High power PNP epitaxial planar bipolar transistor
Features
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- High breakdown voltage VCEO = -100 V plementary to 2STC2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
- Audio power amplifier
TO-3P
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STA2510 Package TO-3P Packaging Tube
Order code 2STA2510
May 2008
.
Rev 2
1/7
.st. A7
Electrical...