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2STC4467 - High power NPN epitaxial planar bipolar transistor

General Description

soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology.

The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO = 120 V.
  • Complementary to 2STA1694.
  • Fast-switching speed t(s).
  • Typical ft = 20 MHz c.
  • Fully characterized at 125 oC rodu.

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2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 Electrical ratings 1 Electrical ratings 2STC4467 Table 2.