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2STC2510 - High power NPN epitaxial planar bipolar transistor

General Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1.

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2STC2510 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC2510 Package TO-3P Packaging Tube Order code 2STC2510 May 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 2STC2510 1 Electrical ratings 2.