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2STC5242 - High power NPN epitaxial planar bipolar transistor

Datasheet Summary

Description

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Features

  • High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz 3 2 1.

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Datasheet Details

Part number 2STC5242
Manufacturer STMicroelectronics
File Size 220.40 KB
Description High power NPN epitaxial planar bipolar transistor
Datasheet download datasheet 2STC5242 Datasheet
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2STC5242 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz 3 2 1 Application ■ Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STC5242 Marking 2STC5242 Package TO-3P Packaging Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STC5242 1 www.datasheet4u.com Electrical ratings Table 2.
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