2STC4468 - High power NPN epitaxial planar bipolar transistor

STMicroelectronics

Datasheet Details

Part number	2STC4468
Manufacturer	STMicroelectronics
File Size	248.23 KB
Description	High power NPN epitaxial planar bipolar transistor
Datasheet	2STC4468_STMicroelectronics.pdf

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1.

📁 2STC4468 Similar Datasheet

2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
2ST2480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
2ST31A - NPN Transistor (INCHANGE)
2ST501T - NPN Transistor (INCHANGE)
2STA1695 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
2STA1962 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
2STBN15D100 - NPN Transistor (ST Microelectronics)
2STD1665 - Low voltage fast-switching NPN power transistor (ST Microelectronics)

Other Datasheets by STMicroelectronics

Published: May 31, 2009 |