2STC5242 - High power NPN epitaxial planar bipolar transistor

STMicroelectronics

Datasheet Details

Part number	2STC5242
Manufacturer	STMicroelectronics
File Size	220.40 KB
Description	High power NPN epitaxial planar bipolar transistor
Datasheet	2STC5242_STMicroelectronics.pdf

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology.

High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz 3 2 1.

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Published: May 31, 2009 |