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STMicroelectronics Electronic Components Datasheet

55NF06 Datasheet

STP55NF06

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STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 - 50A TO-220/TO-220FP/I²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NF06
www.DataSheet4U.cSoTmB55NF06-1
STB55NF06
STP55NF06FP
60 V
60 V
60 V
60 V
<0.018
<0.018
<0.018
<0.018
50 A
50 A
50 A
50 A(*)
s TYPICAL RDS(on) = 0.015
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
s THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
TO-220FP
3
2
1
TO-220
3
2
1
123
I²PAK
TO-262
(Suffix “-1”)
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
March 2003
.
Value
STP_B55NF06(-1)
STP55NF06FP
60
60
± 20
50 50(*)
35 35(*)
200 200(*)
110 30
0.73
0.2
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 50A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 25A, VDD= 30V
1/12


STMicroelectronics Electronic Components Datasheet

55NF06 Datasheet

STP55NF06

No Preview Available !

STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
I²PAK
D²PAK
TO-220
TO-220FP
1.36 5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
www.DataSheet4UO.cFomF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 27.5 A
Min.
2
Typ.
3
0.015
Max.
4
0.018
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 27.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
18
1530
300
105
Max.
Unit
S
pF
pF
pF
2/12


Part Number 55NF06
Description STP55NF06
Maker ST Microelectronics
Total Page 12 Pages
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