6N60M2 - N-Channel MOSFET

STMicroelectronics

General Description

technology.

Key Features

Order code VDS STN6N60M2 600 V.
Extremely low gate charge.
Excellent output capacitance (Coss) profile.
100% avalanche tested.
Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3).

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6N60M2 n-channel mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	6N60M2
Manufacturer	STMicroelectronics
File Size	258.04 KB
Description	N-Channel MOSFET
Datasheet	6N60M2 Datasheet

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STN6N60M2 N-channel 600 V, 1.00 Ω typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package 3 2 1 SOT223-2 Features Order code VDS STN6N60M2 600 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3) Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high efficiency converters.