6N80K5
Features
Order codes VDS RDS(on)max ID PTOT
STB6N80K5
STD6N80K5 800 V
STI6N80K5
1.6 Ω
4.5 A 85 W
STP6N80K5
I2PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
D(2, TAB)
- Industry’s lowest RDS(on)
- Industry’s best figure of merit (Fo M)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
G(1) S(3)
AM01476v1
Applications
- Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STB6N80K5 STD6N80K5 STI6N80K5 STP6N80K5
Table 1. Device...
