AM82731-003 datasheet, transistors equivalent, STMicroelectronics

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Application

. . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INP.

Description

The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can wit.

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