AM82731-025 transistors equivalent, rf & microwave transistors.
LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE .
The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures a.
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