AM82731-012 datasheet, transistors equivalent, STMicroelectronics

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AM82731-012 Application

. . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTP.

AM82731-012 Description

The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operaion over a wide range of pulse widths, duty cycles, and temperatures and.

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