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STMicroelectronics Electronic Components Datasheet

BUZ41A Datasheet

N-Channel MOSFET

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BUZ41A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
BUZ41A
Voss
500 V
ROS(on)
1.5 D
10
4.5 A
• HIGH VOLTAGE - FOR OFF-LINE SMPS
• ULTRA FAST SWITCHING FOR OPERATION
AT<100KHz
• EASY DRIVE - FOR REDUCED COST AND
COST
INDUSTRIAL APPLICATIONS:
• SWITCHING POWER SUPPLIES
• MOTOR CONTROLS
N - channel enhancement mode POWER MOS field
effect transistor. Easy drive and very fast switch-
ing times make this POWER MOS transistor ideal
for high speed switching applications.
Typical applications include switching power sup-
plies and motor speed control.
,
TO-220
INTERNAL SCHEMATIC
DIAGRAM
s
ABSOLUTE MAXIMUM RATINGS
Vos
VOGR
VGS
10
10M
Ptot
Tstg
Tj
Drain-source voltage (VGS =0)
Drain-gate voltage (RGS =20 KD)
Gate-source voltage
Drain current (continuous) Tc =35°C
Drain current (pulsed)
Total dissipation at Tc <25°C
Storage temperature
Max. operating junction temperature
DIN humidity category (DIN 40040)
IEC climatic category (DIN IEC 68-1)
June 1988
500
500
±20
4.5
18
75
-55 to 150
150
E
55/150/56
V
V
V
A
A
W
°C
°C
1/4
199


STMicroelectronics Electronic Components Datasheet

BUZ41A Datasheet

N-Channel MOSFET

No Preview Available !

BUZ41A
THERMAL DATA
Rthj _case Thermal resistance junction-case
Rthj _ amb Thermal resistance junction-ambient
max 1.67 °CIW
max 75 °CIW
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameters
Test Conditions
OFF
V(BR) oss Drain-source
breakdown voltage
10= 250 p,A
loss Zero gate voltage
Vos= Max Rating
drain current (VGS = 0) Vos= Max Rating
IGSS Gate-body leakage
current (Vos = 0)
VGs= ±20 V
VGs= 0
Tj = 125°C
500
V
250 p,A
1000 p,A
±100 nA
ON
VGS (th) Gate threshold
voltage
Ros (on) Static drain-source
on resistance
Vos= VGS
VGs= 10 V
10= 1 mA
10= 2.5 A
2.1
4V
1.5 Q
DYNAMIC
gfs Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Vos= 25 V
Vos= 25 V
VGs= 0
10= 2.5 A
1.5
f= 1 MHz
mho
2000
170
70
pF
pF
pF
SWITCHING
td (on)
tr
td (off)
tf
Turn-on time
Rise time
Turn-off delay time
Fall time
Voo= 30V
RGs= 50 Q
10= 2.6 A
VGs= 10 V
45 ns
60 ns
140 ns
65 ns
200


Part Number BUZ41A
Description N-Channel MOSFET
Maker STMicroelectronics
PDF Download

BUZ41A Datasheet PDF






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