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DB3TG Datasheet DIAC

Manufacturer: STMicroelectronics

General Description

Functioning as a trigger diode with a fixed voltage reference, the DB3TG can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts.

DB3TG DIAC DO-35 ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter ITRM Repetitive peak on-state current tp = 20 µs F= 120 Hz Tstg Storage temperature range Tj Operating junction temperature range Value 2 Unit A - 40 to + 125 °C October 2001 - Ed: 2A 1/4 DB3TG ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Symbol Parameter Test Conditions VBO Breakover voltage * I VBO1 - VBO2 I Breakover voltage symmetry ∆ V Dynamic breakover voltage * VO Output voltage * IBO Breakover current * tr Rise time * IR Leakage current * * Applicable to both forward and reverse directions.

** Connected in parallel to the device.

Overview

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Key Features

  • s VBO : 32V s Low breakover current: 15µA max s Breakover voltage range: 30 to 34V.