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STMicroelectronics Electronic Components Datasheet

DC34 Datasheet

TRIGGER DIODES

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®
FEATURES
VBO : 32V / 34V / 40V VERSIONS
LOW BREAKOVER CURRENT
DB3 /DB4 / DC34
TRIGGER DIODES
DESCRIPTION
High reliability glass passivation insuring
parameter stability and protection against
junction contamination.
DO 35
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
P Power dissipation on printed circuit
(L = 10 mm)
Ta = 65 °C
ITRM Repetitive peak on-state curren t
tp = 20 µs
F= 100 Hz
Tstg Storage and operating junction temperature range
Tj
Value
150
2
- 40 to + 125
- 40 to + 125
Unit
mW
A
°C
°C
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-a) Junction to ambient
Rth (j-l) Junction-leads
April 1995
Value
400
150
Unit
°C/W
°C/W
1/4


STMicroelectronics Electronic Components Datasheet

DC34 Datasheet

TRIGGER DIODES

No Preview Available !

DB3 / DB4 / DC34
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test Conditions
Value
Unit
DB3 DC34 DB4
VBO Breakover voltage *
C = 22nF **
MIN 28 30 35
V
see diagram 1
TYP 32 34 40
MAX 36 38 45
[I+VBOI-I-VBOI] Breakover voltage
symmetry
C = 22nF **
see diagram 1
MAX
±3
V
IV± I
Dynamic breakover I = [IBO to IF=10mA] MIN
voltage *
see diagram 1
5
V
VO Output voltage *
see diagram 2
MIN
5
V
IBO Breakover current *
C = 22nF **
MAX 100 50 100 µA
tr Rise time *
see diagram 3
IB
Leakage current *
VB = 0.5 VBO max
see diagram 1
* Electrical characteristic applicable in both forward and reverse directions.
** Connected in parallel with the devices.
TYP
MAX
1.5
10
µs
µA
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
-V
2/4
+ IF
1 0m A
220 V
50 Hz
10 k
500 k
0.1 F
D.U.T
VO
R = 20
IBO
IB
0,5 VBO
V
+V
VBO
- IF
DIAGRAM 3 : Test circuit see diagram 2.
Adjust R for lp=0.5A
90 %
lp
10 %
tr
®


Part Number DC34
Description TRIGGER DIODES
Maker STMicroelectronics
Total Page 4 Pages
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