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GW30V60DF - IGBT

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STMicroelectronics

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GW30V60DF IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – GW30V60DF

Datasheet Details

Part number	GW30V60DF
Manufacturer	STMicroelectronics
File Size	1.83 MB
Description	IGBT
Datasheet	GW30V60DF Datasheet
Additional preview pages of the GW30V60DF datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Tail-less switching off.
VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Jan 21, 2019 |