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STMicroelectronics Electronic Components Datasheet

GW30V60DF Datasheet

IGBT

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STGB30V60DF, STGP30V60DF,
STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
TAB
3
1
D²PAK
TAB
3
2
1
TO-220
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
G (1) Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
E (3) between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order codes
STGB30V60DF
STGP30V60DF
STGW30V60DF
STGWT30V60DF
Table 1. Device summary
Marking
Package
GB30V60DF
GP30V60DF
GW30V60DF
GWT30V60DF
D²PAK
TO-220
TO-247
TO-3P
Packaging
Tape and reel
Tube
Tube
Tube
October 2013
This is information on a product in full production.
DocID024361 Rev 4
1/22
www.st.com
22


STMicroelectronics Electronic Components Datasheet

GW30V60DF Datasheet

IGBT

No Preview Available !

Electrical ratings
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
1 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VCES Collector-emitter voltage (VGE = 0)
IC Continuous collector current at TC = 25 °C
IC
(1)
ICP
Continuous collector current at TC = 100 °C
Pulsed collector current
VGE Gate-emitter voltage
IF Continuous forward current at TC = 25 °C
IF
(1)
IFP
Continuous forward current at TC = 100 °C
Pulsed forward current
PTOT Total dissipation at TC = 25 °C
TSTG Storage temperature range
TJ Operating junction temperature
1. Pulse width limited by maximum junction temperature.
600
60
30
120
±20
60
30
120
258
- 55 to 150
- 55 to 175
Symbol
Table 3. Thermal data
Parameter
RthJC
RthJC
RthJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.58
2.08
50
Unit
V
A
A
A
V
A
A
A
W
°C
°C
Unit
°C/W
°C/W
°C/W
2/22 DocID024361 Rev 4


Part Number GW30V60DF
Description IGBT
Maker STMicroelectronics
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GW30V60DF Datasheet PDF






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