Datasheet4U Logo Datasheet4U.com

L6393 - Half-bridge gate driver

Datasheet Summary

Description

The L6393 is a high-voltage device manufactured with the BCD "OFF-LINE" technology.

It has a monolithic half-bridge gate driver for N-channel Power MOSFET or IGBT.

The high side (floating) section is designed to stand a voltage rail up to 600 V.

Features

  • High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature range Driver current capability:.
  • 270 mA source,.
  • 430 mA sink Switching times 75/35 nsec rise/fall with 1 nF load 3.3 V, 5 V CMOS/TTL inputs comparators with hysteresys Integrated bootstrap diode Uncommitted comparator Adjustable dead-time Compact and simplified layout Bill of material reduction Flexible, easy and fast design SO-14.
  • D.

📥 Download Datasheet

Datasheet preview – L6393

Datasheet Details

Part number L6393
Manufacturer STMicroelectronics
File Size 430.32 KB
Description Half-bridge gate driver
Datasheet download datasheet L6393 Datasheet
Additional preview pages of the L6393 datasheet.
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
L6393 Half-bridge gate driver Preliminary Data Features ■ ■ ■ High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature range Driver current capability: – 270 mA source, – 430 mA sink Switching times 75/35 nsec rise/fall with 1 nF load 3.3 V, 5 V CMOS/TTL inputs comparators with hysteresys Integrated bootstrap diode Uncommitted comparator Adjustable dead-time Compact and simplified layout Bill of material reduction Flexible, easy and fast design SO-14 ■ ■ ■ ■ ■ ■ ■ ■ DIP-14 Description The L6393 is a high-voltage device manufactured with the BCD "OFF-LINE" technology. It has a monolithic half-bridge gate driver for N-channel Power MOSFET or IGBT. www.DataSheet.net/ The high side (floating) section is designed to stand a voltage rail up to 600 V.
Published: |