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M29F512B - 512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory

General Description

See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connected to this device.

Address Inputs (A0-A15).

The Address Inputs select the cells in the memory array to access during Bus Read operations.

Key Features

  • 1st Addr X 555 555 555 555 X X 555 Data F0 AA AA AA AA A0 90 AA 2AA 2AA 2A.

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Full PDF Text Transcription for M29F512B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M29F512B. For precise diagrams, and layout, please refer to the original PDF.

M29F512B 512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROG...

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VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 24h VCC s s s Figure 1.

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