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M29F512B - 512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory

General Description

See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connected to this device.

Address Inputs (A0-A15).

The Address Inputs select the cells in the memory array to access during Bus Read operations.

Key Features

  • 1st Addr X 555 555 555 555 X X 555 Data F0 AA AA AA AA A0 90 AA 2AA 2AA 2A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M29F512B 512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 24h VCC s s s Figure 1.