Datasheet4U Logo Datasheet4U.com

M29W010B Datasheet 1 Mbit 128Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory

Manufacturer: STMicroelectronics

Datasheet Details

Part number M29W010B
Manufacturer STMicroelectronics
File Size 156.98 KB
Description 1 Mbit 128Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Datasheet download datasheet M29W010B Datasheet

General Description

The M29W010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single low voltage (2.7 to 3.6V) supply.

On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

Overview

M29W010B 1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 10µs by Byte typical 8 UNIFORM 16 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 23h 17 A0-A16 W M29W010B E G 8 DQ0-DQ7 s Figure 1.

Logic Diagram s VCC s s VSS AI02747 March 2000 This is preliminary information on a new product now in development or undergoing evaluation.

Details are subject to change without notice.

Key Features

  • sequential Bus Write operations. Failure to observe a valid sequence of Bus Write opera.