M29W040B Datasheet | STMicroelectronics

4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME - 10µs per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend TSOP32 (NZ) 8 x 14mm s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming LOW POWER CONSUMPTION - Standby and Automatic Standby s Figure 1. Logic Diagram s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year VCC s s ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: E3h A0-A18 19 8 DQ0-DQ7 AI02953 March 2000 1/20 Figure 2. PLCC Connections Figure 3. TSOP Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 AI02951 A11 A9 A8 A13 A14 A17 W VCC A18 A16 A15 A12 A7 A6 A5 A4 A12 A15 A16 A18 VCC W...