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M29W040B - 4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory

General Description

The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single low voltage (2.7 to 3.6V) supply.

On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

Key Features

  • e of Bus Write operations will result in the memory returning to Read mode. The.

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Datasheet Details

Part number M29W040B
Manufacturer STMicroelectronics
File Size 128.16 KB
Description 4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Datasheet download datasheet M29W040B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M29W040B 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend TSOP32 (NZ) 8 x 14mm s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby s Figure 1.