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M58WR016KU Key Features
- VDD = 1.7 V to 2 V for Program, Erase and Read
- VDDQ = 1.7 V to 2 V for I/O buffers
- VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read
- Synchronous Burst Read mode: 86 MHz
- Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time
- 10 µs by Word typical for Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options Memory blocks
- Multiple Bank memory array: 4 Mbit Banks
- Parameter Blocks (top or bottom location) Dual operations
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