M58WR016KL Overview
Address inputs (ADQ0-ADQ15, A16-Amax) . 17 Data input/output (ADQ0-ADQ15) . 17 Reset/Power-Down (RP).
M58WR016KL Key Features
- VDD = 1.7 V to 2 V for Program, Erase and Read
- VDDQ = 1.7 V to 2 V for I/O buffers
- VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read
- Synchronous Burst Read mode: 86 MHz
- Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time
- 10 µs by Word typical for Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options Memory blocks
- Multiple Bank memory array: 4 Mbit Banks
- Parameter Blocks (top or bottom location) Dual operations