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M58WR016KL - Flash memories

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ST Microelectronics

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M58WR016KL Flash memories by ST Microelectronics - Datasheet Preview — Datasheet preview – M58WR016KL

Datasheet Details

Part number	M58WR016KL
Manufacturer	STMicroelectronics
File Size	1.07 MB
Description	Flash memories
Datasheet	M58WR016KL Datasheet
Note	This datasheet PDF includes multiple part numbers: M58WR016KL, M58WR032KU. Please refer to the document for exact specifications by model.
Additional preview pages of the M58WR016KL datasheet.

Product details

Description

. . . 17 Chip Enable (E)

Features

Supply voltage.
VDD = 1.7 V to 2 V for Program, Erase and Read.
VDDQ = 1.7 V to 2 V for I/O buffers.
VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read.
Synchronous Burst Read mode: 86 MHz.
Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time.
10 µs by Word typical for Factory Program.
Double/Quadruple Word Program option.
Enhanced Factory Program options Memory.

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Other Datasheets by ST Microelectronics

M58WR016KU - Flash memories
M58WR032EB - Flash Memory
M58WR032ET - Flash Memory
M58WR032KL - Flash memories
M58WR032KU - Flash memories
M58WR064EB - 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

Published: Jun 21, 2007 |