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M58WR016KL Datasheet Flash Memories

Manufacturer: STMicroelectronics

Overview: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2 V for Program, Erase and Read.
  • VDDQ = 1.7 V to 2 V for I/O buffers.
  • VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 86 MHz.
  • Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time.
  • 10 µs by Word typical for Factory Program.
  • Double/Quadruple Word Program option.
  • Enhanced Factory Program options Memory.

More Datasheets from STMicroelectronics

Part Number Description
M58WR016KU Flash memories
M58WR032EB Flash Memory
M58WR032ET Flash Memory
M58WR032KL Flash memories
M58WR032KU Flash memories
M58WR064EB 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
M58WR064ET 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
M58WR064HB 1.8 V supply Flash memories
M58WR064HT 1.8 V supply Flash memories
M58WR064KL Flash memories

M58WR016KL Distributor