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M58WR016KU - Flash memories

Download the M58WR016KU datasheet PDF. This datasheet also covers the M58WR032KU variant, as both devices belong to the same flash memories family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2 V for Program, Erase and Read.
  • VDDQ = 1.7 V to 2 V for I/O buffers.
  • VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 86 MHz.
  • Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time.
  • 10 µs by Word typical for Factory Program.
  • Double/Quadruple Word Program option.
  • Enhanced Factory Program options Memory.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58WR032KU_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M58WR032KB 32Mb Multi Bank Burst Flash memories Micron
M58WR032KT 32Mb Multi Bank Burst Flash memories Micron
M58WR064B FLASH MEMORY STMicroelectronics
M58WR064KB 64Mb Multi Bank Burst Flash memories Micron
M58WR064KT 64Mb Multi Bank Burst Flash memories Micron

Other Datasheets by STMicroelectronics

Part Number Description
M58WR016KL Flash memories
M58WR032EB Flash Memory
M58WR032ET Flash Memory
M58WR032KL Flash memories
M58WR032KU Flash memories

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.