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M58WR064HB - 1.8 V supply Flash memories

Description

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Features

  • Supply voltage.
  • VDD = 1.7 V to 2 V for program, erase and read.
  • VDDQ = 1.7 V to 2.24 V for I/O buffers.
  • VPP = 12 V for fast program (optional) Synchronous/asynchronous read.
  • Synchronous burst read mode: 66 MHz.
  • Asynchronous/synchronous page read mode.
  • Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time.
  • 8 µs by word typical for fast factory program.
  • Double/quadruple word program option.

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www.DataSheet4U.com M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.
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