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MJD112T4 - Complementary power Darlington transistors

Download the MJD112T4 datasheet PDF. This datasheet also covers the MJD112 variant, as both devices belong to the same complementary power darlington transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

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Figure 1.

Key Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJD112_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
MJD112 Complementary power Darlington transistor
MJD117 Complementary power Darlington transistor
MJD117T4 Complementary power Darlington transistors
MJD3055T4 Low voltage NPN power transistor
MJD31CT4-A Low voltage NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD112 MJD117T4 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK DPAK Packaging Tape and reel Tape and reel 1/10 www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2.