The device is manufactured in planar technology with “base island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Figure 1.
Table 1.
| Part number | MJD31CT4-A |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 277.57 KB |
| Description | Low voltage NPN power transistor |
| Datasheet |
 MJD31CT4-A Datasheet
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|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| MJD31C | NPN Transistor | SeCoS |
| MJD31C | NPN Transistor | Diodes |
| MJD31C | Silicon NPN Power Transistor | Inchange Semiconductor |
| MJD31C | Complementary Power Transistors | Kexin |
| MJD31C | COMPLEMENTARY PLASTIC POWER TRANSISTORS | CDIL |
| Part Number | Description |
|---|---|
| MJD3055T4 | Low voltage NPN power transistor |
| MJD32CT4 | Low voltage PNP power transistor |
| MJD32CT4-A | Automotive-grade low voltage PNP power transistor |
| MJD112 | Complementary power Darlington transistor |
| MJD112T4 | Complementary power Darlington transistors |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
