MSC83301 Datasheet - STMicroelectronics

RF & MICROWAVE TRANSISTORS

MSC83301 General Description

The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC8.

MSC83301 Datasheet (122.37 KB)

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MSC83301

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STMicroelectronics ↗

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122.37 KB

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Rf & microwave transistors.
MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPAB.

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MSC83301 MICROWAVE TRANSISTORS STMicroelectronics

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MSC83301 General Description

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