MSC83301 transistors equivalent, rf & microwave transistors.
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC.
The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR a.
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