PD55008L-E transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration
* POUT = 8W with 17dB gain @ 500MHz / 12.5V
* Integrated ESD protection
* New leadless pla.
It operates at 12V in common source mode at frequencies up to 1GHz.
PD55008L-E boasts the excellent gain, linearity and.
The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GH.
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