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PD55008-E Datasheet, STMicroelectronics

PD55008-E transistor equivalent, rf power transistor.

PD55008-E Avg. rating / M : 1.0 rating-14

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PD55008-E Datasheet

Features and benefits


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* Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lea.

Application

It operates at 12 V in common source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and .

Description

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.

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TAGS

PD55008-E
POWER
transistor
STMicroelectronics

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