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PD55008S-E - RF POWER transistor

Download the PD55008S-E datasheet PDF (PD55008-E included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power transistor.

Description

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies up to 1 GHz.

Features

  • Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD55008-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s superior linearity performance makes it an ideal solution for car mobile radio.
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