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PD57006-E Datasheet RF POWER transistor

Manufacturer: STMicroelectronics

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Overview

PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 6 W with 15dB gain @ 945 MHz / 28 V.
  • New RF plastic package.